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  t4 - lds -02 79 -1, rev . 1 (1 2 1565 ) ?201 2 microsemi corporation page 1 of 4 1n 914 ur available on commercial version glass melf switching diode qualified per mil - prf - 19500/ 116 qualified levels : jan, jantx, and jantxv description th is popular 1n 914 ur jedec regis tered switching/signal diode features internal metallurgical bonded construction for military grade products per mil - prf - 19500/116 . previously listed as a cdll 914 t h is small low capacitance diode , with very fast switching speeds , is hermetically sealed and bonded into a double - plug do - 213aa package. it may be used in a variety of very high speed applications including switchers, detectors, transient or'ing, logic arrays, blocking, as well as low - capacitance steering diodes, etc. microsemi also offers a variety of other switching/signal diodes. do - 213aa package also available in : do - 35 package ( axial - leaded ) 1n914 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of p opular jedec registered 1n 914 number . ? hermetically sealed glass construction . ? m etallurgical ly bond ed . ? double plug construction. ? very low capacitance . ? very fast switching speeds with minimal reverse recovery times . ? j an, jantx, and jantxv qualification is available per mil - prf - 19500/116 . (s ee part nomenclature for all available options .) ? rohs compliant version available (commercial grade only) . applications / benefits ? high frequency data lines. ? small size for high density mounting using the surface mount method (see package illustration). ? rs - 232 & rs C 422 i nterface n etworks. ? ethernet 10 bas e t. ? low - capacitance steering diodes . ? lan. ? computers. maximum ratings @ 25 oc msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j & t stg - 65 to +1 75 o c thermal resistance junction - to - ambient (1) r ? ja 325 o c /w thermal resistance junction - to - endcap (2 ) r ? j ec 100 o c /w maximum breakdown voltage v ( br) 100 v working peak reverse voltage v rwm 75 v average rectified current @ t a = 75 oc (3 ) i o 200 ma non - repetitive sinusoidal surge current ( tp = 8. 3 m s) i fsm 2 a (pk) notes: 1. t a = +75c on printed circuit board (pcb), pcb = fr4 - .0625 inch (1.59 mm) 1 - layer 1 - oz cu, horizontal, in still air; pads = .061 inch (1.55 mm) x.105 inch (2.67 mm); r ? ja with a defined pcb thermal resistance condition included, is measured at i o = 200 ma dc. 2. see figure 2 for thermal impedance curves. 3. s ee figure 1 for derating. downloaded from: http:///
t4 - lds -02 79 -1, rev . 1 (1 2 1565 ) ?201 2 microsemi corporation page 2 of 4 1n 914 ur mechanical and packaging ? case: hermetically sealed glass case package. ? termina ls: t in /l ead plated or rohs compliant m atte -t in (on commercial grade only) over copper clad steel . s olderable per mil - std - 750, method 2026. ? polar ity: cathode end is banded . ? mounting: the a xial c oefficient of e xpansion (coe) o f this d evice is a pproximately +6ppm/c. the coe of the m ounting s urface s ystem s hould b e s elected to p rovide a s uitable m atch w ith t his d evice. ? marking: part number. ? tape & ree l option: standard per eia - 296. consult factory for quantities. ? weight: 0.2 grams. ? see p ackage di mensions on last page. part nomenclature jan 1n914 ur (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = c ommercial grade jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs c ompliant (on commercial grade only) blank = non - rohs c ompliant melf surface mount symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified vo ltage and temperature. i o average rectified forward current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. t rr reverse recovery time: the time interval between the instant the current passes through zer o when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse cur rent occurs. v f forward voltage: the forward voltage the device will exhibit at a specified current (typic ally shown as maximum value). v r reverse voltage: the reverse voltage dc value, no alternating component. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. electrical characteristics @ 25 oc unless otherwise noted forward voltage v f1 @ i f =10 ma forward voltage v f2 @ i f =5 0 ma reverse recovery time t rr (note 1) forward recovery time t fr (note 2) reverse current i r1 @ 20 v reverse current i r2 @ 75 v reverse current i r3 @ 20 v t a =150 o c reverse current i r4 @ 75 v t a =150 o c capaci - tance c (note 3) capaci - tance c (note 4) v v ns ns na a a a pf pf 0.8 1.2 5 20 25 0.5 35 75 4.0 2.8 note 1: i f = i r = 10 ma, r l = 100 ohms . note 3: v r = 0 v, f = 1 mhz, v sig = 50 mv (pk to pk). note 2: i f = 50 ma . note 4: v r = 1.5v, f = 1 mhz, v sig = 50 mv (pk to pk). downloaded from: http:///
t4 - lds -02 79 -1, rev . 1 (1 2 1565 ) ?201 2 microsemi corporation page 3 of 4 1n 914 ur graphs t a (oc) (a mbient ) figure 1 C temperature C c urrent d erating time (s) figure 2 C thermal impedance dc operation maximum io rating (ma) theta ( c/w) downloaded from: http:///
t4 - lds -02 79 -1, rev . 1 (1 2 1565 ) ?201 2 microsemi corporation page 4 of 4 1n 914 ur package dimensions notes: 1. dimensions are in inches. millimeters are given for general information only. 2. dimensions are pre - solder dip. 3. referencing to dimension s, minimum clearance of glass body to mounting surface on all orientations. 4. in accordance with asme y14.5m, diameters are equivalent to x symbology. pad layout dim inch millimeters min max min max bd 0.063 0.067 1.60 1.70 bl 0.130 0.146 3.30 3.71 ect 0.016 0.022 0.41 0.56 s .001 min 0.03 min inch mm a .200 5.08 b .055 1.40 c .080 2.03 downloaded from: http:///


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